Please use this identifier to cite or link to this item: http://lib.kart.edu.ua/handle/123456789/23263
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dc.contributor.authorNerubatskyi, Volodymyr-
dc.contributor.authorPlakhtii, Oleksandr-
dc.contributor.authorHordiienko, Denys-
dc.contributor.authorKhoruzhevskyi, Hryhorii-
dc.date.accessioned2024-05-28T08:08:02Z-
dc.date.available2024-05-28T08:08:02Z-
dc.date.issued2020-
dc.identifier.citationProspects for the development of power electronics by application of technologies for production of power semiconductor switches based on silicon carbide / V. Nerubatskyi, O. Plakhtii, D. Hordiienko, H. Khoruzhevskyi // International scientific journal «Industry 4.0». - 2020. - Vol. 5, Issue 4. - P. 170-173.uk_UA
dc.identifier.issn2534-997X (online); 2534-8582 (print)-
dc.identifier.urihttp://lib.kart.edu.ua/handle/123456789/23263-
dc.description.abstractThe article presents an analysis of the technical characteristics of promising technologies of power transistors based on silicon (Si) and silicon carbide (SiC). A comparative analysis of the energy characteristics of power diodes, MOSFETs and IGBT transistors of various classes based on these technologies is presented. An analysis of current-voltage characteristics and values of static and dynamic power losses in power switches is also given.uk_UA
dc.language.isoenuk_UA
dc.publisherScientific Technical Union of Mechanical Engineering "Industry 4.0"uk_UA
dc.subjectpower electronicsuk_UA
dc.subjectsilicon carbideuk_UA
dc.subjectgallium nitrideuk_UA
dc.subjecttechnologiesuk_UA
dc.subjecttransistoruk_UA
dc.titleProspects for the development of power electronics by application of technologies for production of power semiconductor switches based on silicon carbideuk_UA
dc.typeArticleuk_UA
Appears in Collections:2020

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