Please use this identifier to cite or link to this item:
http://lib.kart.edu.ua/handle/123456789/23263| Title: | Prospects for the development of power electronics by application of technologies for production of power semiconductor switches based on silicon carbide |
| Authors: | Nerubatskyi, Volodymyr Plakhtii, Oleksandr Hordiienko, Denys Khoruzhevskyi, Hryhorii |
| Keywords: | power electronics silicon carbide gallium nitride technologies transistor |
| Issue Date: | 2020 |
| Publisher: | Scientific Technical Union of Mechanical Engineering "Industry 4.0" |
| Citation: | Prospects for the development of power electronics by application of technologies for production of power semiconductor switches based on silicon carbide / V. Nerubatskyi, O. Plakhtii, D. Hordiienko, H. Khoruzhevskyi // International scientific journal «Industry 4.0». - 2020. - Vol. 5, Issue 4. - P. 170-173. |
| Abstract: | The article presents an analysis of the technical characteristics of promising technologies of power transistors based on silicon (Si) and silicon carbide (SiC). A comparative analysis of the energy characteristics of power diodes, MOSFETs and IGBT transistors of various classes based on these technologies is presented. An analysis of current-voltage characteristics and values of static and dynamic power losses in power switches is also given. |
| URI: | http://lib.kart.edu.ua/handle/123456789/23263 |
| ISSN: | 2534-997X (online); 2534-8582 (print) |
| Appears in Collections: | 2020 |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| Nerubatskyi.pdf | 1.24 MB | Adobe PDF | View/Open |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.